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Modeling and simulation of saturating hot electron degradation in LDD NMOSFETs : from early mode to late mode

Resource type
Thesis
Thesis type
(Thesis) Ph.D.
Date created
1996
Authors/Contributors
Author: Raychaudhuri, Arya
Copyright statement
Copyright is held by the author.
Permissions
The author has not granted permission for the file to be printed nor for the text to be copied and pasted. If you would like a printable copy of this thesis, please contact summit-permissions@sfu.ca.
Scholarly level
Graduate student (PhD)
Subject
Metal oxide semiconductor field-effect transistors -- Defects.
Hot carriers.
Language
English
Member of collection
Engineering Science Theses
Download file Size
b18000745.pdf 5.36 MB

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