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Measurement of the electron-initiated impact ionization coefficient of indium phosphide using InP-GaAsSb-InP double heterojunction bipolar transistors

Resource type
Thesis
Thesis type
(Thesis) M.A.Sc.
Date created
2004
Authors/Contributors
Author: Lam, Selena
Copyright statement
Copyright is held by the author.
Permissions
The author has not granted permission for the file to be printed nor for the text to be copied and pasted. If you would like a printable copy of this thesis, please contact summit-permissions@sfu.ca.
Scholarly level
Graduate student (Masters)
Language
English
Member of collection
Engineering Science Theses
Download file Size
b35353314.pdf 1.46 MB

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