Quantum Interference Photocurrent Generation in 2D Materials

Photocurrent generated by quantum interference involves using synchronized light to precisely control electric current in semiconductor materials. Research, combined with repeatability and optimization, on this topic can pave the way for the development of ultra-fast petahertz electronic devices. We installed optical infrastructure to enhance power control and beam precision, incorporating a microscope and a sample mount system for repeatability. Initially, we investigated photocurrent generation in low-temperature-grown gallium arsenide, known for supporting these precisely controlled electric currents. However, similar investigations in multi-layer molybdenum disulfide and mono-layer graphene showed no detectable signal. We then conducted a wavelength dependence analysis on low-temperaturegrown gallium arsenide, testing how various wavelengths (1600 nm, 1550 nm, 1500 nm, 1450 nm, 1400 nm, 1350 nm) affect the resulting electric current signal. The results revealed that 1600 nm is the optimal wavelength for generating photocurrent with our current setup.