Charge Transport Characterization and Lifetime of Geometrically Asymmetrical MoS2 Devices

This thesis details the electrical characterization of a new asymmetrical geometry molybdenum disulfide (MoS2) photodiode using transient photovoltage (TPV) and transient photocurrent (TPC) techniques for the first time. The charge carrier lifetimes, charge densities, and built-in electric fields were determined and compared with literature. Charge carrier lifetimes in a primary device were found to be in the microsecond range which is two to three orders of magnitude higher than other reported carrier lifetimes. The carrier lifetimes showed a decrease with increasing charge density, which was determined to range between 10^12 and 10^15 cm^−3. The electric fields of two devices have been estimated throughout the length of each device and had a maximum strength of 1.5 × 10^5 V/m.