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Epitaxial electrodeposition of Fe onto GaAs nanowires.

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Thesis type
(Thesis) M.Sc.
Date created
Author: Yang, Mingze
Fe contacts with thickness ranging from 50 nanometers to 100 nanometers were selectively fabricated onto Au catalysed, Te-doped n-GaAs (111) nanowires via galvanostatic electrodeposition. An insulating polymer (SU-8) was used to fill in between the nanowires preventing deposition directly onto the GaAs substrate. Scanning transmission electron microscopy investigations combined with energy-dispersive X-ray analysis verified the existence of single-crystalline, epitaxial Fe/GaAs (110) on the sidewalls of typical nanowires. Electrical barrier heights (0.53 ± 0.02 eV) and ideality factors (1.7 to 1.9) were obtained from current-voltage measurements of individual nanowires in a scanning electron microscope.
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Supervisor or Senior Supervisor
Thesis advisor: Kavanagh, Karen
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