Skip to main content

Electrodeposition of metal on Gallium Arsenide nanowires

Resource type
Thesis type
(Thesis) M.Sc.
Date created
Author: Liu, Chao
In the majority of reported studies, metal contacts to semiconductor nanowires (NWs) have been fabricated using high-resolution electron-beam lithography with metal evaporation. In our study, copper (Cu) or iron (Fe) electrical contacts to as-grown gallium arsenide (GaAs) nanowires have been fabricated via electrodeposition. For nominally undoped GaAs nanowires, we find that Cu or Fe has a preference for nucleation and growth on the gold catalyst avoiding the sidewalls. For carbon-doped nanowires with higher conductivity, Cu nucleation and growth began to occur on the sidewalls as well as on the gold catalyst. COMSOL finite element analysis, carried out to simulate the experimental results, was used to discuss the growth mechanism in terms of nanowire sample surface, conductivity and morphology.
Copyright statement
Copyright is held by the author.
The author granted permission for the file to be printed and for the text to be copied and pasted.
Scholarly level
Supervisor or Senior Supervisor
Thesis advisor: Kavanagh, Karen
Member of collection
Download file Size
etd6733_CLiu.pdf 3.56 MB

Views & downloads - as of June 2023

Views: 0
Downloads: 0