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Highly-doped SiC Resonator with Ultra-Large Tuning Frequency Range by Joule Heating Effect

Peer reviewed: 
Yes, item is peer reviewed.
Scholarly level: 
Final version published as: 

Guzman, P., Dinh, T., Phan, H.-P., Joy, A. P., Qamar, A., Bahreyni, B., Zhu, Y., Rais-Zadeh, M., Li, H., Nguyen, N.-T., & Dao, D. V. (2020). Highly-doped SiC resonator with ultra-large tuning frequency range by Joule heating effect. Materials & Design, 194, 108922.

Date created: 
DOI: 10.1016/j.matdes.2020.108922
MEMS resonator
Electrothermal tuning
Joule heating
Silicon carbide

Tuning the natural frequency of a resonator is an innovative approach for the implementation of mechanical resonators in a broad range of fields such as timing applications, filters or sensors. The conventional electrothermal technique is not favorable towards large tuning range because of its reliance on metallic heating elements. The use of metallic heaters could limit the tuning capability due to the mismatch in thermal expansion coefficients of materials forming the resonator. To solve this drawback, herein, the design, fabrication, and testing of a highly-doped SiC bridge resonator that excludes the use of metallic material as a heating element has been proposed. Instead, free-standing SiC structure functions as the mechanical resonant component as well as the heating element. Through the use of the Joule heating effect, a frequency tuning capability of almost ∆f/fo ≈ 80% has been demonstrated. The proposed device also exhibited a wide operating frequency range from 72.3 kHz to 14.5 kHz. Our SiC device enables the development of highly sensitive resonant-based sensors, especially in harsh environments.


The full text of this paper will be available in September, 2022 due to the embargo policies of Materials & Design. Contact to enquire if the full text of the accepted manuscript can be made available to you.

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Rights remain with the authors.