Skip to main content

Epitaxial electrodeposition of Fe onto GaAs nanowires.

Resource type
Thesis type
(Thesis) M.Sc.
Date created
2015-01-07
Authors/Contributors
Author: Yang, Mingze
Abstract
Fe contacts with thickness ranging from 50 nanometers to 100 nanometers were selectively fabricated onto Au catalysed, Te-doped n-GaAs (111) nanowires via galvanostatic electrodeposition. An insulating polymer (SU-8) was used to fill in between the nanowires preventing deposition directly onto the GaAs substrate. Scanning transmission electron microscopy investigations combined with energy-dispersive X-ray analysis verified the existence of single-crystalline, epitaxial Fe/GaAs (110) on the sidewalls of typical nanowires. Electrical barrier heights (0.53 ± 0.02 eV) and ideality factors (1.7 to 1.9) were obtained from current-voltage measurements of individual nanowires in a scanning electron microscope.
Document
Identifier
etd8857
Copyright statement
Copyright is held by the author.
Permissions
The author granted permission for the file to be printed and for the text to be copied and pasted.
Scholarly level
Supervisor or Senior Supervisor
Thesis advisor: Kavanagh, Karen
Member of collection
Download file Size
etd8857_MYang.pdf 3.37 MB

Views & downloads - as of June 2023

Views: 0
Downloads: 0